IGBT 600V 120A 416W SOT227
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Features: SpecificationsDescription APT1001R1AN is a kind of N-channel enhancement mode high volt...
Features: Faster Switching 100% Avalanche Tested Lower Leakage PopularTO-3 PackageSpecificat...
Specifications Symbol Parameter APT1001R1BN APT1001R3BN UNIT VDSS Drain-Source Voltag...
Processor Series : | AM1810 | Series: | - |
Manufacturer: | Microsemi Power Products Group | IGBT Type: | NPT |
Configuration: | Single | Voltage - Collector Emitter Breakdown (Max): | 600V |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 100A | Current - Collector (Ic) (Max): | 120A |
Current - Collector Cutoff (Max): | 250µA | Input Capacitance (Cies) @ Vce: | 12.3nF @ 25V |
Power - Max: | 416W | Input: | Standard |
NTC Thermistor: | Yes | Mounting Type: | Chassis Mount |
Package / Case: | ISOTOP |
Symbol | Parameter | Max ratings | Unit | ||
VCES | Collector - Emitter Breakdown Voltage | 600 | V | ||
IC1 | Continuous Collector Current | TC = 25°C | 120 | A | |
IC2 | TC = 95°C | 100 | A | ||
ICM | Pulsed Collector Current | TC = 25°C | 320 | A | |
VGE | Gate Emitter Voltage | ±20 | V | ||
PD | Maximum Power Dissipation | TC = 25°C | 416 | W | |
IFAV | Maximum Average Forward Current | Duty cycle=0.5 | TC = 80°C | 30 | A |
IFRMS | RMS Forward Current (Square wave, 50% duty) | 39 | A |