Specifications Symbol Parameter APT1004RBN APT1004R2BN UNIT VDSS Drain-Source Voltage 1000 1000 Volts ID Continuous Drain Current @ TC = 25°C 4.4 4.0 Amps IDM Pulsed Drain Current 17.6 16 VGS Gate-Source Voltage ±30 Volts PD Total Power Dissipation @ TC = 2...
APT1004RBN: Specifications Symbol Parameter APT1004RBN APT1004R2BN UNIT VDSS Drain-Source Voltage 1000 1000 Volts ID Continuous Drain Current @ TC = 25°C 4.4 4.0 Amps IDM Pulsed Drain...
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Features: SpecificationsDescription APT1001R1AN is a kind of N-channel enhancement mode high volt...
Features: Faster Switching 100% Avalanche Tested Lower Leakage PopularTO-3 PackageSpecificat...
Specifications Symbol Parameter APT1001R1BN APT1001R3BN UNIT VDSS Drain-Source Voltag...
Symbol | Parameter | APT 1004RBN |
APT 1004R2BN |
UNIT |
VDSS | Drain-Source Voltage | 1000 | 1000 | Volts |
ID | Continuous Drain Current @ TC = 25°C |
4.4 | 4.0 | Amps |
IDM | Pulsed Drain Current | 17.6 | 16 | |
VGS | Gate-Source Voltage |
±30 |
Volts | |
PD | Total Power Dissipation @ TC = 25°C |
180 |
Watts | |
Linear Derating Factor |
1.44 |
W/°C | ||
TJ,TSTG | Operating and Storage Junction Temperature Range |
-55 to150 |
°C | |
TL | Lead Temperature: 0.063" from Case for 10 Sec. |
300 |