APT10043JVR

FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Gate Charge (Qg) @ Vgs: 480nC @ 10V
Input Capacitance (Ciss) @ Vds: 9000pF @ 25V
Manufacturer: Microsemi Power Products Group
Supplier Device Package: ISOTOP?
Drain to Source Voltage (Vdss): 1000V (1kV)
Power - Max: 500W
Vgs(th) (Max) @ Id: 4V @ 1mA
Series: POWER MOS V®
Current - Continuous Drain (Id) @ 25° C: 22A
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 430 mOhm @ 500mA, 10V


Features:

Faster Switching

  Lower Leakage

100% Avalanche Tested

Popular SOT-227 Package

Specifications

Symbol	Parameter	APT10043JVR	UNIT
VDSS	Drain-Source Voltage	1000	Volts
ID	Continuous Drain Current @ Tc = 25 °C	22	Amps
IDM	Pulsed Drain Current	88
VGS	Gate-Source Voltage Continuous	±30	Volts
VGSM	Gate-Source Voltage Transient	±40
PD	Total Power Dissipation @ TC = 25	500	Watts
	Linear Derati	4	W/°C
TJ,TSTG	Operating and Storage Junction Temperature Range	-55to 150	°C
TL	Lead Temperature: 0.063" from Case for 10 Sec.	300
IAR	Avalanche Current (Repetitive and Non-Repetitive)	13	Amps
EAR	Repetitive Avalanche Energy	30	mJ
EAS	Single Pulse Avalanche Energy	1300