Features: • Lower Input Capacitance • Increased Power Dissipation • Lower Miller Capacitance • Easier To Drive • Lower Gate Charge, Qg • TO-220 PackageSpecifications Symbol Parameter APT1003RKLL UNIT VDSS Drain-Source Voltage 1000 Volts ...
APT1003RKLL: Features: • Lower Input Capacitance • Increased Power Dissipation • Lower Miller Capacitance • Easier To Drive • Lower Gate Charge, Qg • TO-220 PackageSpe...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: SpecificationsDescription APT1001R1AN is a kind of N-channel enhancement mode high volt...
Features: Faster Switching 100% Avalanche Tested Lower Leakage PopularTO-3 PackageSpecificat...
Specifications Symbol Parameter APT1001R1BN APT1001R3BN UNIT VDSS Drain-Source Voltag...
• Lower Input Capacitance
• Increased Power Dissipation
• Lower Miller Capacitance
• Easier To Drive
• Lower Gate Charge, Qg
• TO-220 Package
Symbol | Parameter | APT1003RKLL | UNIT |
VDSS | Drain-Source Voltage | 1000 | Volts |
ID | Continuous Drain Current @ Tc = 25 °C |
4 | Amps |
IDM | Pulsed Drain Current |
16 | |
VGS | Gate-Source Voltage Continuous | ±30 | Volts |
VGSM | Gate-Source Voltage Transient | ±40 | |
PD | Total Power Dissipation @ TC = 25 | 139 | Watts |
Linear Derati | 1.11 | W/°C | |
TJ,TSTG | Operating and Storage Junction Temperature Range | -55to 150 | °C |
TL | Lead Temperature: 0.063" from Case for 10 Sec. | 300 | |
IAR | Avalanche Current (Repetitive and Non-Repetitive) |
4 | Amps |
EAR | Repetitive Avalanche Energy | 10 | mJ |
EAS | Single Pulse Avalanche Energy | 425 |