APT10035JLL

FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Power - Max: 520W
Manufacturer: Microsemi Power Products Group
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP?
Drain to Source Voltage (Vdss): 1000V (1kV)
Series: POWER MOS 7®
Current - Continuous Drain (Id) @ 25° C: 25A
Rds On (Max) @ Id, Vgs: 350 mOhm @ 14A, 10V
Gate Charge (Qg) @ Vgs: 186nC @ 10V
Input Capacitance (Ciss) @ Vds: 5185pF @ 25V


Features:

• Lower Input Capacitance

• Increased Power Dissipation

• Lower Miller Capacitance

• Easier To Drive

• Lower Gate Charge, Qg

• Popular SOT-227 Package

Specifications

Symbol	Parameter	APT10035JLL	UNIT
VDSS	Drain-Source Voltage	1000	Volts
ID	Continuous Drain Current @ Tc = 25 °C	25	Amps
IDM	Pulsed Drain Current	100
VGS	Gate-Source Voltage Continuous	±30	Volts
VGSM	Gate-Source Voltage Transient	±40
PD	Total Power Dissipation @ TC = 25	540	Watts
	Linear Derati	4.32	W/°C
TJ,TSTG	Operating and Storage Junction Temperature Range	-55to 150	°C
TL	Lead Temperature: 0.063" from Case for 10 Sec.	300
IAR	Avalanche Current (Repetitive and Non-Repetitive)	25	Amps
EAR	Repetitive Avalanche Energy	50	mJ
EAS	Single Pulse Avalanche Energy	3000