APT1002RBNR

APT1002RBNR is a kind of N-channel enhancement mode high voltage power MOSFET.

What comes next is about the maximum ratings APT1002RBNR at T_C=25.The V_DSS (drain-source voltage) is 1000 V.The I_D (continuous drain current @ T_C=25) is 7 A.The I_DM (pulsed drain current) is 28 A.The V_GS (gate-source voltage continuous) is ±20 V.The V_GSM (gate-source voltage transient) is ±30 V.The P_D (total power dissipation @ T_C=25) is 240 W.The T_J,T_STG (operating and storage junction temperature range) is from -55 to 150.The T_L (lead temperature:0.063" from case for 10 sec.) is 300.The I_AR (avalanche current (repetitive and non-repetitive)) is 7 A.The E_AR (repetitive avalanche energy) is 20 mJ.The E_AS (single pulse avalanche energy) is 800 mJ.Then is about the thermal characteristics.The maximum R_JC (junction to case) is 0.51/W.The maximum R_JA (junction to ambient) is 40/W.

The following is about the static electrical characteristics APT1002RBNR .The minimum BV_DSS (drain-source breakdown voltage) is 1000 V at V_GS=0 V,I_D=250A.The maximum I_DSS (zero gate voltage drain current) is 250A at V_DS=0.8V_DSS,V_GS=0 V and is 1000A at V_DS=0.8V_DSS,V_GS=0 V,T_C=125.The maximum I_GSS (gate-source leakage current) is ±100 nA at V_GS=±20 V,V_DS=0 V.The minimum V_GS(TH) (gate threshold voltage) is 2 V and the maximum is 4 V at V_DS=V_GS,I_D=1.0 mA.