MOSFET N-CH 1000V 30A SOT-227
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Features: SpecificationsDescription APT1001R1AN is a kind of N-channel enhancement mode high volt...
Features: Faster Switching 100% Avalanche Tested Lower Leakage PopularTO-3 PackageSpecificat...
Specifications Symbol Parameter APT1001R1BN APT1001R3BN UNIT VDSS Drain-Source Voltag...
Lower Input Capacitance
Increased Power Dissipation
Lower Miller Capacitance
Easier To Drive
Lower Gate Charge, Qg
Popular SOT-227 Package
Symbol | Parameter | APT10026JLL | UNIT |
VDSS | Drain-Source Voltage | 1000 | Volts |
ID | Continuous Drain Current @ Tc = 25 °C |
30 | Amps |
IDM | Pulsed Drain Current |
120 | |
VGS | Gate-Source Voltage Continuous | ±30 | Volts |
VGSM | Gate-Source Voltage Transient | ±40 | |
PD | Total Power Dissipation @ TC = 25 | 595 | Watts |
Linear Derati | 4.76 | W/°C | |
TJ,TSTG | Operating and Storage Junction Temperature Range | -55to 150 | °C |
TL | Lead Temperature: 0.063" from Case for 10 Sec. | 300 | |
IAR | Avalanche Current (Repetitive and Non-Repetitive) |
30 | Amps |
EAR | Repetitive Avalanche Energy | 50 | mJ |
EAS | Single Pulse Avalanche Energy | 3200 |
Technical/Catalog Information | APT10026JLL |
Vendor | Microsemi-PPG |
Category | Discrete Semiconductor Products |
Mounting Type | Chassis Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25° C | 30A |
Rds On (Max) @ Id, Vgs | 260 mOhm @ 15A, 10V |
Input Capacitance (Ciss) @ Vds | 7114pF @ 25V |
Power - Max | 595W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 267nC @ 10V |
Package / Case | SOT-227 |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | APT10026JLL APT10026JLL |