APT10021JFLL

FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Manufacturer: Microsemi Power Products Group
Supplier Device Package: ISOTOP?
Drain to Source Voltage (Vdss): 1000V (1kV)
Series: POWER MOS 7®
Current - Continuous Drain (Id) @ 25° C: 37A
Vgs(th) (Max) @ Id: 5V @ 5mA
Power - Max: 694W
Rds On (Max) @ Id, Vgs: 210 mOhm @ 18.5A, 10V
Gate Charge (Qg) @ Vgs: 395nC @ 10V
Input Capacitance (Ciss) @ Vds: 9750pF @ 25V


Features:

• Lower Input Capacitance

• Increased Power Dissipation

• Lower Miller Capacitance

• Easier To Drive

• Lower Gate Charge, Qg

• Popular SOT-227 Package

Specifications

Symbol	Parameter	APT10021JFLL	UNIT
VDSS	Drain-Source Voltage	1000	Volts
ID	Continuous Drain Current @ Tc = 25 °C	37	Amps
IDM	Pulsed Drain Current	148
VGS	Gate-Source Voltage Continuous	±30	Volts
VGSM	Gate-Source Voltage Transient	±40
PD	Total Power Dissipation @ TC = 25	690	Watts
	Linear Derati	5.52	W/°C
TJ,TSTG	Operating and Storage Junction Temperature Range	-55to 150	°C
TL	Lead Temperature: 0.063" from Case for 10 Sec.	300
IAR	Avalanche Current (Repetitive and Non-Repetitive)	37	Amps
EAR	Repetitive Avalanche Energy	50	mJ
EAS	Single Pulse Avalanche Energy	3600

Parameters:

Technical/Catalog Information	APT10021JFLL
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	37A
Rds On (Max) @ Id, Vgs	210 mOhm @ 18.5A, 10V
Input Capacitance (Ciss) @ Vds	9750pF @ 25V
Power - Max	694W
Packaging	Tube
Gate Charge (Qg) @ Vgs	395nC @ 10V
Package / Case	SOT-227
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APT10021JFLL APT10021JFLL