APT1001RBVFRG

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 11A
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 150nC @ 10V
Package / Case: TO-247-3
Drain to Source Voltage (Vdss): 1000V (1kV)
Vgs(th) (Max) @ Id: 4V @ 1mA
Manufacturer: Microsemi Power Products Group
Supplier Device Package: TO-247 [B]
Series: POWER MOS V®
Power - Max: 278W
Rds On (Max) @ Id, Vgs: 1 Ohm @ 5.5A, 10V
Input Capacitance (Ciss) @ Vds: 3050pF @ 25V


Parameters:

Technical/Catalog Information	APT1001RBVFRG
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	1 Ohm @ 5.5A, 10V
Input Capacitance (Ciss) @ Vds	3050pF @ 25V
Power - Max	278W
Packaging	Tube
Gate Charge (Qg) @ Vgs	150nC @ 10V
Package / Case	TO-247
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APT1001RBVFRG APT1001RBVFRG