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APT1001R6SFLLG

MOSFET N-CH 1000V 8A D3PAK

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SeekIC No. : 003430419 Detail

APT1001R6SFLLG: MOSFET N-CH 1000V 8A D3PAK

APT1001R6SFLLG Data Sheet

floor Price/Ceiling Price

US $ 8.45~8.45 / Piece | Get Latest Price
Part Number:
APT1001R6SFLLG
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~30
  • Unit Price
  • $8.45
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/26

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Product Details

Quick Details

Series: POWER MOS 7® Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV)
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 8A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 4A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) @ Vgs: 55nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1320pF @ 25V
Power - Max: 266W Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Supplier Device Package: D3 [S]    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 8A
Packaging: Tube
Gate Charge (Qg) @ Vgs: 55nC @ 10V
Drain to Source Voltage (Vdss): 1000V (1kV)
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 4A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Input Capacitance (Ciss) @ Vds: 1320pF @ 25V
Manufacturer: Microsemi Power Products Group
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Series: POWER MOS 7®
Power - Max: 266W
Supplier Device Package: D3 [S]


Parameters:

Technical/Catalog InformationAPT1001R6SFLLG
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C8A
Rds On (Max) @ Id, Vgs1.6 Ohm @ 4A, 10V
Input Capacitance (Ciss) @ Vds 1320pF @ 25V
Power - Max266W
PackagingTube
Gate Charge (Qg) @ Vgs55nC @ 10V
Package / CaseD³Pak (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT1001R6SFLLG
APT1001R6SFLLG



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