Specifications Symbol Parameter APT1001R6BN UNIT VDSS Drain-Source Voltage 1000 Volts ID Continuous Drain Current @ TC = 25°C 8 Amps IDM Pulsed Drain Current 32 VGS Gate-Source Voltage ±30 Volts PD Total Power Dissipation @ TC = 25°C 240 Watts Linear Deratin...
APT1001R6BN: Specifications Symbol Parameter APT1001R6BN UNIT VDSS Drain-Source Voltage 1000 Volts ID Continuous Drain Current @ TC = 25°C 8 Amps IDM Pulsed Drain Current 32 VGS Gate...
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Features: SpecificationsDescription APT1001R1AN is a kind of N-channel enhancement mode high volt...
Features: Faster Switching 100% Avalanche Tested Lower Leakage PopularTO-3 PackageSpecificat...
Specifications Symbol Parameter APT1001R1BN APT1001R3BN UNIT VDSS Drain-Source Voltag...
Symbol | Parameter | APT1001R6BN | UNIT |
VDSS | Drain-Source Voltage | 1000 | Volts |
ID | Continuous Drain Current @ TC = 25°C |
8 | Amps |
IDM | Pulsed Drain Current | 32 | |
VGS | Gate-Source Voltage | ±30 |
Volts |
PD | Total Power Dissipation @ TC = 25°C | 240 | Watts |
Linear Derating Factor | 1.96 | W/°C | |
TJ,TSTG | Operating and Storage Junction Temperature Range | -55 to150 | °C |
TL | Lead Temperature: 0.063" from Case for 10 Sec. | 300 |