Features: • -30V/-3A ,RDS(ON)=100m(typ.) @ VGS=-10VRDS(ON)=140m(typ.) @ VGS=-4.5V• Super High Dense Cell Design• Reliable and Rugged• Lead Free Available (RoHS Compliant)Application• Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems...
APM2607C: Features: • -30V/-3A ,RDS(ON)=100m(typ.) @ VGS=-10VRDS(ON)=140m(typ.) @ VGS=-4.5V• Super High Dense Cell Design• Reliable and Rugged• Lead Free Available (RoHS Compliant)Appl...
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Symbol | Parameter |
Rating |
Unit | |
VDSS | Drain-Source Voltage |
-30 |
V | |
VGSS | Gate-Source Voltage |
±20 | ||
ID* | Continue Drain Current | VGS=10V |
-3 |
A |
IDM* | 300s Pulsed Drain Current |
-12 | ||
IS* | Diode Continuous Forward Curren |
-1.2 |
A | |
TJ | Maximum Junction Temperature |
150 |
||
TSTG | Storage Temperature Range |
-55 to 150 | ||
PD* | Maximum Power Dissipation | TA=25 |
1 |
W |
TA=100 |
0.4 | |||
RJA* | Thermal Resistance-Junction to Ambient |
120 |
/W |