DescriptionThe APM2301AAC-TR belongs to APM2301AA, which is a P-channel enhancement mode mosfet. The maim features of APM2301AAC-TR can be summarized as (1)-20V/-3A ,RDS(ON)=72m(typ.) @ VGS=-4.5V/RDS(ON)=98m(typ.) @ VGS=-2.5V; (2)super high dense cell design; (3)reliable and rugged; (4)lead free ...
APM2301AAC-TR: DescriptionThe APM2301AAC-TR belongs to APM2301AA, which is a P-channel enhancement mode mosfet. The maim features of APM2301AAC-TR can be summarized as (1)-20V/-3A ,RDS(ON)=72m(typ.) @ VGS=-4.5V/R...
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The APM2301AAC-TR belongs to APM2301AA, which is a P-channel enhancement mode mosfet.
The maim features of APM2301AAC-TR can be summarized as (1)-20V/-3A ,RDS(ON)=72m(typ.) @ VGS=-4.5V/RDS(ON)=98m(typ.) @ VGS=-2.5V; (2)super high dense cell design; (3)reliable and rugged; (4)lead free available (RoHS compliant). It can be applicated in power management in notebook computer, portable equipment and battery powered systems.(ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.)
The absolute maximum ratings of APM2301AAC-TR are (1)VDSS(drain-source voltage): -20V ; (2)VGSS(gate-source voltage):±12 V ; (3)ID*( continuous drain current): -3V ; (4)IDM*(300s pulsed drain current):-10 A (VGS: -4.5V); (5)IS*( diode continuous forward current):-1 A ; (6)TJ( maximum junction temperature):150 °C; (7)TSTG(storage temperature range): -55 to 150 °C; (8)PD*(maximum power dissipation): 0.83W(TA=25°C )/0.3W(TA=100°C); (9)RJA*(thermal resistance-junction to ambient): 150 °C/W(*surface mounted on 1in^2 pad area, t 10sec.)