APM2030ND

APM2030ND is a kind of N-Channel enhancement mode MOSFET.The typical applications include switching regulators and switching converters.There are some features as follows.First is super high dense cell design.The second is reliable and rugged.The last one is lead free available (RoHS compliant).

What comes next is about the absolute maximum ratings of APM2030ND(T_A=25).The V_DSS (Drain-Source Voltage) is 20 V.The V_GSS (Gate-Source Voltage) is ±12 V.The I_D (Continuous Drain Current) is 6 A and the I_DM (Pulsed Drain Current) is 24 A V_GS=4.5 V.The I_S (Diode Continuous Forward Current) is 2.3 A.The P_D (Power Dissipation for Single Operation) is 1.47 W at T_A=25 and is 0.58 W at T_A=100.The R_JA (Thermal Resistance-Junction to Ambient) is 85/W.The T_J (Maximum Junction Temperature) is 150.The T_STG (Storage Temperature Range) is from -55 to 150.

The following is about the electrical characteristics about APM2030ND(T_A=25 unless otherwise noted).First is about the static characteristics.The minimum BV_DSS (Drain-Source Breakdown Voltage) is 20 V at V_GS=0 V, I_DS=250 A.The maximum I_DSS (Zero Gate Voltage Drain Current) is 1A at V_DS=16 V, V_GS=0 V and the maximum is 30A at V_DS=16 V, V_GS=0 V, T_J=85.The minimum V_GS(th) (Gate Threshold Voltage) is 0.5 V,the typical is 0.7 V and the maximum is 1.0 V at V_DS=V_GS, I_DS=250A.The maximum I_GSS (Gate Leakage Current) is ±100 nA at V_GS=±12 V, V_DS=0 V.The typical R_DS(ON) (Drain-Source On-state Resistance) is 28 m and the maximum is 32 m at V_GS=4.5 V, I_DS=6 A.The typical R_DS(ON) (Drain-Source On-state Resistance) is 38 m and the maximum is 45 m at V_GS=2.5 V, I_DS=2 A.Then is about the gate charge characteristics.The typical Q_g (Total Gate Charge) is 9 nC and the maximum is 11 nC at V_DS=10 V, V_GS=4.5 V, I_DS=6 A.The typical Q_gs (Gate-Source Charge) is 3.6 nC and the typical Q_gd (Gate-Drain Charge) is 1 nC at V_DS=10 V, V_GS=4.5 V, I_DS=5 A.