Features: · 20V/40A,RDS(ON)=12mW (typ.) @ VGS=4.5VRDS(ON)=18mW (typ.) @ VGS=2.5V· Super High Dense Cell Design· Reliable and Rugged· Lead Free Available (RoHS Compliant)ApplicationPower Management in Desktop Computer or DC/DC ConvertersSpecifications Symbol Parameter Rating Unit Common ...
APM2014N U: Features: · 20V/40A,RDS(ON)=12mW (typ.) @ VGS=4.5VRDS(ON)=18mW (typ.) @ VGS=2.5V· Super High Dense Cell Design· Reliable and Rugged· Lead Free Available (RoHS Compliant)ApplicationPower Management i...
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· 20V/40A,
RDS(ON)=12mW (typ.) @ VGS=4.5V
RDS(ON)=18mW (typ.) @ VGS=2.5V
· Super High Dense Cell Design
· Reliable and Rugged
· Lead Free Available (RoHS Compliant)
Symbol | Parameter | Rating | Unit | |
Common Ratings (TA=25°C Unless Otherwise Noted) | ||||
VDSS | Drain-Source Voltage | 20 | V | |
VGSS | Gate-Source Voltage | ±16 | ||
TJ | Maximum Junction Temperature | 150 | °C | |
TSTG | Storage Temperature Range | -55 to 150 | °C | |
IS | Diode Continuous Forward Current | TC=25°C | 16 | A |
Mounted on Large Heat Sink | ||||
IDP | 300s Pulse Drain Current Tested | TC=25°C | 100 | A |
TC=100°C | 75 | |||
ID | Continuous Drain Current | TC=25°C | 40* | A |
TC=100°C | 25 | |||
PD | Maximum Power Dissipation | TC=25°C | 50 | W |
TC=100°C | 20 | |||
RJC | Thermal Resistance-Junction to Case | 2.5 | °C/W | |
Mounted on PCB of 1in2 pad area | ||||
IDP | 300s Pulse Drain Current Tested | TA=25°C | 100 | A |
TA=100°C | 75 | |||
ID | Continuous Drain Current | TA=25°C | 10 | A |
TA=100°C | 6 | |||
PD | Maximum Power Dissipation | TA=25°C | 2.5 | W |
TA=100°C | 1 | |||
RJC | Thermal Resistance-Junction to Ambient | 50 | °C/W | |
Mounted on PCB of Minimum Footprint | ||||
IDP | 300s Pulse Drain Current Tested | TA=25°C | 100 | A |
TA=100°C | 75 | |||
ID | Continuous Drain Current | TA=25°C | 9 | A |
TA=100°C | 6 | |||
PD | Maximum Power Dissipation | TA=25°C | 1.6 | W |
TA=100°C | 0.6 | |||
RJC | Thermal Resistance-Junction to Ambient | 75 | °C/W |
Note:
* Current limited by bond wire.