Features: SpecificationsDescriptionAPM2014NU is a kind of N-Channel enhancement mode MOSFET.The typical applications include power management in desktop computer or DC/DC converters.There are some features as follows.First is super high dense cell design.The second is reliable and rugged.The last ...
APM2014NU: Features: SpecificationsDescriptionAPM2014NU is a kind of N-Channel enhancement mode MOSFET.The typical applications include power management in desktop computer or DC/DC converters.There are some f...
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APM2014NU is a kind of N-Channel enhancement mode MOSFET.The typical applications include power management in desktop computer or DC/DC converters.There are some features as follows.First is super high dense cell design.The second is reliable and rugged.The last one is lead free available (RoHS compliant).
What comes next is about the common absolute maximum ratings of APM2014NU(TA=25).The VDSS (Drain-Source Voltage) is 20 V.The VGSS (Gate-Source Voltage) is ±16 V.The TJ (Maximum Junction Temperature) is 150.The TSTG (Storage Temperature Range) is from -55 to 150.The IS (Diode Continuous Forward Current) is 16 A at TC=25.
The following is about the electrical characteristics about APM2014NU(TA=25 unless otherwise noted).First is about the static characteristics.The minimum BVDSS (Drain-Source Breakdown Voltage) is 20 V at VGS=0 V, IDS=250 A.The maximum IDSS (Zero Gate Voltage Drain Current) is 1A at VDS=16 V, VGS=0 V and the maximum is 30A at TJ=85.The minimum VGS(th) (Gate Threshold Voltage) is 0.7 V,the typical is 0.9 V and the maximum is 1.5 V at VDS=VGS, IDS=250A.The maximum IGSS (Gate Leakage Current) is ±100 nA at VGS=±16 V, VDS=0 V.The typical RDS(ON) (Drain-Source On-state Resistance) is 12 m and the maximum is 14 m at VGS=4.5 V, IDS=10 A.The typical RDS(ON) (Drain-Source On-state Resistance) is 18 m and the maximum is 25 m at VGS=2.5 V, IDS=5 A.Then is about the gate charge characteristics.The typical Qg (Total Gate Charge) is 18.2 nC and the maximum is 24 nC at VDS=10 V, VGS=4.5 V, IDS=5 A.The typical Qgs (Gate-Source Charge) is 5.6 nC and the typical Qgd (Gate-Drain Charge) is 4.8 nC at VDS=10 V, VGS=4.5 V, IDS=5 A.