AP9563M

Pinout




Specifications

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	-40	V
VGS	Gate-Source Voltage	± 25	V
ID@TA=25	Continuous Drain Current3	-6	A
ID@TA=70	Continuous Drain Current3	-4.8	A
IDM	Pulsed Drain Current1	-30	A
PD@TA=25	Total Power Dissipation	2.5	W
	Linear Derating Factor	0.02	W/
TSTG	Storage Temperature Range	-55 to 150
TJ	Operating Junction Temperature Range	-55 to 150

Description

The Advanced Power MOSFETs AP9563M from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The SO-8 package is universally preferred for all commercial-industrial urface mount applications and suited for low voltage applications uch as DC/DC converters.