Features: Lower On-resistance Simple Drive Requirement Fast Switching CharacteristicSpecifications Symbol Parameter Rating Units VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±25 V ID@TA=25 Continuous Drain Current3 -4.0 A ID@TA=70 Continuous Drain Current...
AP9575M: Features: Lower On-resistance Simple Drive Requirement Fast Switching CharacteristicSpecifications Symbol Parameter Rating Units VDS Drain-Source Voltage -60 V VGS Gate-Source V...
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Symbol | Parameter | Rating | Units |
VDS | Drain-Source Voltage | -60 | V |
VGS | Gate-Source Voltage | ±25 | V |
ID@TA=25 | Continuous Drain Current3 | -4.0 | A |
ID@TA=70 | Continuous Drain Current3 | -3.2 | A |
IDM | Pulsed Drain Current1 | -20 | A |
PD@TA=25 | Total Power Dissipation | 2.5 | W |
Linear Derating Factor | 0.02 | W/ | |
TSTG | Storage Temperature Range | -55 to 150 | |
TJ | Operating Junction Temperature Range | -55 to 150 |
The Advanced Power MOSFETs AP9575M from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.