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AP40T03J

Specifications Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±25 V ID@TA=25 Continuous Drain Current, VGS @ 10V 28 A ID@TA=100 Continuous Drain Current, VGS @ 10V 24 A IDM Pulsed Drain Curre...

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AP40T03J: Specifications Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±25 V ID@TA=25 Continuous Drain Current, VGS @ 10V ...

AP40T03J Data Sheet

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Part Number:
AP40T03J
Supply Ability:
5000

Price Break

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Symbol
Parameter
Rating
Units
VDS
 Drain-Source Voltage
30
V
VGS
 Gate-Source Voltage
±25
V
ID@TA=25
 Continuous Drain Current, VGS @ 10V
28
A
ID@TA=100
 Continuous Drain Current, VGS @ 10V
24
A
IDM
 Pulsed Drain Current1
95
A
PD@TA=25
 Total Power Dissipation
31.25
W
 Linear Derating Factor
0.25
W/
TSTG
 Storage Temperature Range
-55 to 150
TJ
 Operating Junction Temperature Range
-55 to 150



Description

The Advanced Power MOSFETs AP40T03J from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.

The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP40T03J) are available for low-profile applications.




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