Features: Lower On-resistance Simple Drive Requirement Fast Switching Characteristic ID -30A RoHS CompliantSpecifications Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID@TC=25 Continuous Drain Current, VGS @ 10V -30 A ...
AP40P03GI: Features: Lower On-resistance Simple Drive Requirement Fast Switching Characteristic ID -30A RoHS CompliantSpecifications Symbol Parameter Rating Units VDS Drain-Source Voltage -30 ...
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Symbol | Parameter | Rating | Units |
VDS | Drain-Source Voltage | -30 | V |
VGS | Gate-Source Voltage | ±20 | V |
ID@TC=25 | Continuous Drain Current, VGS @ 10V | -30 | A |
ID@TC=100 | Continuous Drain Current, VGS @ 10V | -18 | A |
IDM | Pulsed Drain Current1 | -120 | A |
PD@TC=25 | Total Power Dissipation | 31.3 | W/ |
Linear Derating Factor | 0.25 | W | |
TSTG | Storage Temperature Range | -55 to 150 | |
TJ | Operating Junction Temperature Range | -55 to 150 |
The Advanced Power MOSFETs AP40P03GI from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is universally preferred for all commercial-industrial through hole applications.