Features: `Integrated common-drain N-channel MOSFET
`High-accuracy voltage detection circuit
◗ Overcharge detection accuracy ±25mV (+25), ±30mV (-5 to +55)
◗ Overcharge release accuracy ±50mV
◗ Over-discharge detection accuracy ±50mV
◗ Over-discharge release accuracy ±100mV
◗ Discharge over-current detection accuracy ±15mV
◗ Load short-circuit detection accuracy ±200mV
◗ Charge over-current detection accuracy ±30mV
`±20% accurate internal detection delay times (external capacitors are unnecessary)
`Charger connection pin withstands up to 28V
`Wide operating temperature range: -40 to +85
`Low current consumption
◗ 3.0A (typ.), 5.5A (max.) in operation mode at +25
`Small 2mm x 5mm 4-pin DFN package`Integrated common-drain N-channel MOSFET
`High-accuracy voltage detection circuit
◗ Overcharge detection accuracy ±25mV (+25), ±30mV (-5 to +55)
◗ Overcharge release accuracy ±50mV
◗ Over-discharge detection accuracy ±50mV
◗ Over-discharge release accuracy ±100mV
◗ Discharge over-current detection accuracy ±15mV
◗ Load short-circuit detection accuracy ±200mV
◗ Charge over-current detection accuracy ±30mV
`±20% accurate internal detection delay times (external capacitors are unnecessary)
`Charger connection pin withstands up to 28V
`Wide operating temperature range: -40 to +85
`Low current consumption
◗ 3.0A (typ.), 5.5A (max.) in operation mode at +25
`Small 2mm x 5mm 4-pin DFN packageApplication· Lithium-ion rechargeable battery packs
· Lithium-polymer rechargeable battery packs· Lithium-ion rechargeable battery packs
· Lithium-polymer rechargeable battery packsSpecifications
|
Parameter |
Rating |
|
VDD to VSS |
-0.3V to +12V |
|
VM to VDD |
-28V to +0.3V |
|
MOSFET Gate-to-Source Voltage |
-0.3V to +12V |
|
Continuous Drain Current(4)
(RJA = 84/W, TA = 25)
(RJA = 84/W, TA = 85) |
4.8A
3.4A |
|
Pulsed Drain Current |
30A |
|
Storage Temperature (TS) |
-55 to +125 |
|
Operating Temperature (TA) |
-40 to +85 |
|
Power Dissipation(4)
(RJA = 84/W, TA = 25)
(RJA = 84/W, TA = 85) |
1.4W
0.7W |
Note:
4. The value of RJA is measured with the device mounted on 1-in2 FR-4 board with 2-oz. copper, in a still air environment with TA = 25. The value in any given application depends on the user's specific board design.
|
Parameter |
Rating |
|
VDD to VSS |
-0.3V to +12V |
|
VM to VDD |
-28V to +0.3V |
|
MOSFET Gate-to-Source Voltage |
-0.3V to +12V |
|
Continuous Drain Current(4)
(RJA = 84/W, TA = 25)
(RJA = 84/W, TA = 85) |
4.8A
3.4A |
|
Pulsed Drain Current |
30A |
|
Storage Temperature (TS) |
-55 to +125 |
|
Operating Temperature (TA) |
-40 to +85 |
|
Power Dissipation(4)
(RJA = 84/W, TA = 25)
(RJA = 84/W, TA = 85) |
1.4W
0.7W |
Note:
4. The value of RJA is measured with the device mounted on 1-in2 FR-4 board with 2-oz. copper, in a still air environment with TA = 25. The value in any given application depends on the user's specific board design.
DescriptionThe AOZ9004D is a battery protection IC with integrated dual common-drain N-channel MOSFET. The device includes accurate voltage detectors and delay circuits, and is suitable for protecting single-cell lithium-ion / lithium-polymer rechargeable battery packs from overcharge, over-discharge, and over-current conditions.
The AOZ9004D is available in a 2mm x 5mm 4-pin DFN package and is rated over a -40°C to +85°C ambient temperature range.
The AOZ9004D is a battery protection IC with integrated dual common-drain N-channel MOSFET. The device includes accurate voltage detectors and delay circuits, and is suitable for protecting single-cell lithium-ion / lithium-polymer rechargeable battery packs from overcharge, over-discharge, and over-current conditions.
The AOZ9004D is available in a 2mm x 5mm 4-pin DFN package and is rated over a -40°C to +85°C ambient temperature range.
AOZ9004D Data Sheet
