Features: Integrated common-drain N-channel MOSFET High-accuracy voltage detection circuit- Overcharge detection accuracy ±25mV (+25),±30mV (-5 to +55)- Overcharge release accuracy ±50mV- Over-discharge detection accuracy ±50mV- Over-discharge release accuracy ±100mV- Discharge over-current detec...
AOZ9005D: Features: Integrated common-drain N-channel MOSFET High-accuracy voltage detection circuit- Overcharge detection accuracy ±25mV (+25),±30mV (-5 to +55)- Overcharge release accuracy ±50mV- Over-disc...
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Parameter |
Rating |
VDD to VSS |
-0.3V to +12V |
VM to VDD |
-28V to +0.3V |
MOSFET Gate-to-Source Voltage |
-0.3V to +12V |
Continuous Drain Current(4) (RJA = 84/W, TA = 25) (RJA = 84/W, TA = 85) |
3.1A 2.2A |
Pulsed Drain Current |
15A |
Storage Temperature (TS) |
-55 to +125 |
Operating Temperature (TA) |
-40 to +85 |
Power Dissipation(4) (RJA = 84/W, TA = 25) (RJA = 84/W, TA = 85) |
1.4W 0.7W |
Note:
4. The value of RJA is measured with the device mounted on 1-in2 FR-4 board with 2-oz. copper, in a still air environment with TA = 25. The value in any given application depends on the user's specific board design.
The AOZ9005D is a battery protection IC with integrated dual common-drain N-channel MOSFET. The device includes accurate voltage detectors and delay circuits,and is suitable for protecting single-cell lithium-ion / lithium-polymer rechargeable battery packs from overcharge, over-discharge, and over-current conditions.
The AOZ9005D is available in a 2mm x 5mm 4-pin DFN package and is rated over a -40 to +85 ambient temperature range.