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AOT8N65

MOSFET N-CH 650V 8A TO220

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SeekIC No. : 003431351 Detail

AOT8N65: MOSFET N-CH 650V 8A TO220

AOT8N65 Data Sheet

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US $ .26~.26 / Piece | Get Latest Price
Part Number:
AOT8N65
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1000
  • Unit Price
  • $.26
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Quick Details

Series: - Manufacturer: Alpha & Omega Semiconductor Inc
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 650V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 8A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 1.15 Ohm @ 4A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) @ Vgs: 28nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1400pF @ 25V
Power - Max: 208W Mounting Type: Through Hole
Package / Case: TO-220-3 Supplier Device Package: TO-220    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 8A
Gate Charge (Qg) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Input Capacitance (Ciss) @ Vds: 1400pF @ 25V
Drain to Source Voltage (Vdss): 650V
Supplier Device Package: TO-220
Power - Max: 208W
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 1.15 Ohm @ 4A, 10V


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