AOT8N60

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 8A
Drain to Source Voltage (Vdss): 600V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) @ Vgs: 35nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Power - Max: 208W
Input Capacitance (Ciss) @ Vds: 1370pF @ 25V
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 900 mOhm @ 4A, 10V


Features:

`V<sub>DS</sub> (V) = 700V @ 150°C
`I_D = 8A
`R_DS(ON) < 0.9 (VGS = 10V)




Specifications

Parameter	Symbol	AOT10N60	AOTF10N60	Unit
Drain-Source Voltage	VDS	600	600	V
Gate-Source Voltage	VGS	±30	±30	V
Avalanche Current C	IAR	3.2	3.2	A
Continuous Drain Current B TC=25 TC=100	ID	8 5	8 5	A
Pulsed Drain Current C	IDM	32	32	A
Single pulsed avalanche energy G	EAS	150	150	mJ
Repetitive avalanche energy C	EAR	300	300	mJ
Peak diode recovery dv/dt	dv/dt	5	5	V/ns
Power Dissipation B TC=25 Derate above 25	PD	147 1.17	50 0.4	W/
Junction and Storage Temperature Range	TJ,Tstg	-55 to +150	-55 to +150
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds	TL	300	300

* Drain current limited by maximum junction temperature.




Description

The AOT8N60 & AOTF8N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.