AON7702

MOSFET N-CH 30V 20A 8-DFN

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SeekIC No. : 003431177 Detail

AON7702: MOSFET N-CH 30V 20A 8-DFN

floor Price/Ceiling Price

US $ .2~.55 / Piece | Get Latest Price
Part Number:
AON7702
Mfg:
Supply Ability:
5000

Price Break

  • Qty
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  • 1~25
  • 25~100
  • 100~250
  • 250~500
  • 500~1000
  • 1000~2500
  • Unit Price
  • $.55
  • $.43
  • $.38
  • $.33
  • $.28
  • $.22
  • $.2
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/6/3

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Product Details

Quick Details

Series: SRFET™ Manufacturer: Alpha & Omega Semiconductor Inc
FET Type: MOSFET N-Channel, Schottky, Metal Oxide Gain : 11.5 dB at 500 MHz
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 40A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 10 mOhm @ 13.5A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) @ Vgs: 48nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 4250pF @ 15V
Power - Max: 35W Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead Exposed Pad Supplier Device Package: 8-DFN-EP (3x3)    

Description

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25° C: 40A
Gate Charge (Qg) @ Vgs: 48nC @ 10V
Packaging: Cut Tape (CT)
Power - Max: 35W
FET Type: MOSFET N-Channel, Schottky, Metal Oxide
Rds On (Max) @ Id, Vgs: 10 mOhm @ 13.5A, 10V
Package / Case: 8-SMD, Flat Lead Exposed Pad
Manufacturer: Alpha & Omega Semiconductor Inc
Supplier Device Package: 8-DFN-EP (3x3)
Series: SRFET™
Input Capacitance (Ciss) @ Vds: 4250pF @ 15V


Features:

`VDS (V) = 30V
`ID = 13.5A (VGS = 10V)
`RDS(ON) < 10m (VGS = 10V)
`RDS(ON) < 14m (VGS = 4.5V)





Pinout

  Connection Diagram




Specifications

Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain
Current B,G
TC=25
ID
20
A
TC=100
20
Pulsed Drain Current C
IDM
80
Continuous Drain
Current B
TA=25
IDSM
13.5
TA=70
10
Power Dissipation B TC=25
PD
35
W
TC=100
14
Power Dissipation A TA=25
PDSM
3.1
TA=70
2
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150





Description

SRFETTM AON7702/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge.

This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
- RoHS Compliant.
- Halogen Free






Parameters:

Technical/Catalog InformationAON7702
VendorAlpha & Omega Semiconductor Inc
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C20A
Rds On (Max) @ Id, Vgs10 mOhm @ 13.5A, 10V
Input Capacitance (Ciss) @ Vds 4250pF @ 15V
Power - Max35W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs48nC @ 10V
Package / Case8-DFN
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names AON7702
AON7702
785 1139 2 ND
78511392ND
785-1139-2



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