Position: Home  > All Categories> Integrated Circuits (ICs) > AON7200

AON7200

MOSFET N CH 30V 40A DFN3X3EP

product image

AON7200 Picture
See larger image
SeekIC No. : 003431119 Detail

AON7200: MOSFET N CH 30V 40A DFN3X3EP

AON7200 Data Sheet

floor Price/Ceiling Price

US $ .18~.5 / Piece | Get Latest Price
Part Number:
AON7200
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • 250~500
  • 500~1000
  • 1000~2500
  • Unit Price
  • $.5
  • $.38
  • $.34
  • $.29
  • $.25
  • $.2
  • $.18
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: - Manufacturer: Alpha & Omega Semiconductor Inc
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 15.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 40A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) @ Vgs: 20nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1300pF @ 15V
Power - Max: 3.1W Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-DFN-EP (3x3)    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Gate Charge (Qg) @ Vgs: 20nC @ 10V
Power - Max: 3.1W
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 40A
Package / Case: 8-VDFN Exposed Pad
Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds: 1300pF @ 15V
Manufacturer: Alpha & Omega Semiconductor Inc
Supplier Device Package: 8-DFN-EP (3x3)


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Cables, Wires
821-0814-a
415-0100-150
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
Memory Cards, Modules
WT32
VTL5C7
Optical Inspection Equipment
AA924
A21K4B
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
View more