AON5802

Features:

V_DS (V) = 30V
I_D = 8 A (V_GS = 10V)
R_DS(ON) < 17 m (V_GS = 10V)
R_DS(ON) < 20 m (V_GS = 4.5V)
R_DS(ON) < 22 m (V_GS = 4.0V)
R_DS(ON) < 24 m (V_GS = 3.1V)
R_DS(ON) < 30 m (V_GS = 2.5V)
ESD Rating: 2000V HBM




Specifications

Parameter		Symbol	Maximum	Units
Drain-Source Voltage		VDS	30	V
Gate-Source Voltage		VGS	±12	V
Continuous Drain Current. RJA=75°C/W	TA=25°C	ID	8	A
	TA=100°C		6
Pulsed Drain CurrentC		IDM	45
Power Dissipation A RJA=75°C/W	TA=25°C	PDSM	1.7	W
	TA=70°C		1.0
Junction and Storage Temperature Range		TJ, TSTG	-55 to 150	°C

Description

The AON5800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is
ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Standard Product AON5802 is Pb-free (meets ROHS & Sony 259 specifications). AON5802L is a Green Product ordering option. AON5802 and AON5802L are electrically identical.