AON3816

MOSFET DUAL N-CH 20V 4A 8-DFN

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AON3816 Picture
SeekIC No. : 003429867 Detail

AON3816: MOSFET DUAL N-CH 20V 4A 8-DFN

floor Price/Ceiling Price

US $ .14~.14 / Piece | Get Latest Price
Part Number:
AON3816
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~3000
  • Unit Price
  • $.14
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Series: - Manufacturer: Alpha & Omega Semiconductor Inc
FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate
Drain Source Voltage VDS : + / - 20 V Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25° C: 4A Rds On (Max) @ Id, Vgs: 22 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) @ Vgs: 15nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 1315pF @ 10V Power - Max: 1.4W
Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Exposed Pad
Supplier Device Package: 8-DFN (3x3)    

Description

FET Feature: Logic Level Gate
Mounting Type: Surface Mount
Series: -
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25° C: 4A
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power - Max: 1.4W
Packaging: Tape & Reel (TR)
Gate Charge (Qg) @ Vgs: 15nC @ 4.5V
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 22 mOhm @ 4A, 4.5V
Input Capacitance (Ciss) @ Vds: 1315pF @ 10V
Package / Case: 8-SMD, Flat Lead Exposed Pad
Supplier Device Package: 8-DFN (3x3)


Features:

`VDS (V) = 20V
`ID = 4A (VGS = 4.5V)
`RDS(ON) < 22m (VGS = 4.5V)
`RDS(ON) < 23m (VGS = 4V)
`RDS(ON) < 28m (VGS = 2.5V)





Pinout

  Connection Diagram




Specifications

Parameter Symbol
10 Sec
Steady State
Units
Drain-Source Voltage VDS
20
V
Gate-Source Voltage VGS
±12
V
Continuous Drain
Current AF
TA=25°C ID
4
4
A
TC=100°C
4
4
Pulsed Drain Current B IDM
20
Power Dissipation A TC=25°C PD
2.1
1.4
W
TC=100°C
1.5
0.9
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
°C





Description

The AON3816/L uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD protected. This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its common-drain configuration. AON3816 and AO3816L are electrically identical.
-RoHS Compliant
-AO3816L is Halogen Free






Parameters:

Technical/Catalog InformationAON3816
VendorAlpha & Omega Semiconductor Inc (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C4A
Rds On (Max) @ Id, Vgs22 mOhm @ 4A, 4.5V
Input Capacitance (Ciss) @ Vds 1315pF @ 10V
Power - Max1.4W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs15nC @ 4.5V
Package / Case6-DFN
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names AON3816
AON3816
785 1132 6 ND
78511326ND
785-1132-6



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