MOSFET N-CH 20V 12.6A DFN3X3
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Series: | - | Manufacturer: | Alpha & Omega Semiconductor Inc | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Current - Collector (Ic) (Max): | - | FET Feature: | Logic Level Gate | ||
Drain to Source Voltage (Vdss): | 20V | Continuous Drain Current : | 15 A | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 12.6A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 13 mOhm @ 12A, 4.5V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 1V @ 250µA | Gate Charge (Qg) @ Vgs: | 17.9nC @ 4.5V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 1810pF @ 10V | ||
Power - Max: | 3.1W | Mounting Type: | Surface Mount | ||
Package / Case: | 8-VDFN | Supplier Device Package: | 8-DFN (3x3) |
Parameter |
Symbol |
Maximum |
Units | |
Drain-Source Voltage |
VDS |
20 |
V | |
Gate-Source Voltage |
VGS |
±12 |
V | |
Continuous Drain Current A | TA=25°C |
ID |
12 |
A |
TA=70°C |
9.6 | |||
Pulsed Drain Current B |
IDM |
40 | ||
Power DissipationA | TA=25°C |
PD |
3 |
W |
TA=70°C |
1.9 | |||
Junction and Storage Temperature Range |
TJ, TSTG |
-55 to 150 |
°C |
The AON3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its commondrain configuration. Standard Product AON3402 is Pb-free (meets ROHS & Sony 259 specifications). AON3402L is a Green Product ordering option. AON3402 and AON3402L are electrically identical.