AON3814

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25° C: 6A
Packaging: Tape & Reel (TR)
Power - Max: 2.5W
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) @ Vgs: 13nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 1100pF @ 10V
Manufacturer: Alpha & Omega Semiconductor Inc
Package / Case: 8-VDFN
Supplier Device Package: 8-DFN (3x3)
Rds On (Max) @ Id, Vgs: 17 mOhm @ 6A, 4.5V


Features:

`V<sub>DS</sub> (V) = 20V
`I_D = 6A (V_GS = 4.5V)
`R<sub>DS(ON)</sub> < 17m (V<sub>GS</sub> = 4.5V)
`R_DS(ON) < 18.5m (V_GS = 4V)
`R<sub>DS(ON)</sub> < 24m (V<sub>GS</sub> = 2.5V)
`R_DS(ON) < 39m (V_GS = 1.8V)
`ESD Protected




Pinout






Specifications

Parameter		Symbol	Maximum	Units
Drain-Source Voltage		VDS	20	V
Gate-Source Voltage		VGS	±12	V
Continuous Drain Current F	TA=25°C	ID	6	A
	TA=70°C		5.3
Pulsed Drain Current B		IDM	30
Power Dissipation F	TA=25°C	PD	2.4	W
	TA=70°C		1.5
Junction and Storage Temperature Range		TJ, TSTG	-55 to 150	°C

Description

The AON3814 uses advanced trench technology to provide excellent R_DS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V V_GS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its commondrain configuration. Standard Product AON3814 is Pb-free (meets ROHS & Sony 259 specifications).