Features: ·n-channel p-channel·VDS (V) = 30V -30V·ID = 7.2A (VGS=10V) -5.7A (VGS=10V)·RDS(ON) RDS(ON)·< 24mΩ (VGS=10V) < 39m Ω (VGS = -10V)·< 40mΩ (VGS=4.5V) < 62m Ω (VGS = -4.5V)·ESD rating: 1500V (HBM)·P-channel MOSFET has an additional ROC < 1MΩ for·...
AO4615: Features: ·n-channel p-channel·VDS (V) = 30V -30V·ID = 7.2A (VGS=10V) -5.7A (VGS=10V)·RDS(ON) RDS(ON)·< 24mΩ (VGS=10V) < 39m Ω (VGS = -10V)·< 40mΩ (VGS=4.5V) < 62m T...
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Parameter |
Symbol |
Max n-channel |
Max n-channel |
Units | |
Drain-Source Voltage Gate-Source Voltage |
VDS VGS |
30 ±20 |
-30 ±20 |
V V | |
Continuous Drain Current A |
TA=25°C TA=70°C |
ID |
7.2 6.1 |
-4.9 -5.7 |
A |
Pulsed Drain CurrentB |
IDM |
30 |
-30 | ||
Power Dissipation A |
TA=25°C TA=70°C |
PD |
2 1.44 |
2 1.44 |
W |
Avalanche Current B Repetitive avalanche energy 0.1mH B |
IAR EAR |
15 11 |
20 20 |
A mJ | |
Junction and Storage Temperature Range |
TJ, TSTG |
-55 to 150 |
-55 to 150 |
°C |
Parameter |
Symbol |
Typ |
Max |
Units | ||
Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C |
t 10s Steady-State Steady-State t 10s Steady-State Steady-State |
RJL RJL RJA RJA |
n-ch n-ch n-ch p-ch p-ch p-ch |
55 92 37 48 87 37 |
62.5 110 50 62.5 110 50 |
°C/W °C/W °C/W °C/W °C/W °C/W |
The AO4615 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. It is ESD protected. Standard product AO4615 is Pb-free (meets ROHS & Sony 259 specifications). AO4615L is a Green Product ordering option. AO4615 and AO4615L are electrically identical