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AO4604

Features: n-channel p-channelVDS (V) - 30V -30VID = 6.9A -5ARDS(ON) RDS(ON)< 28m (VGS=10V) < 52m (VGS = 10V)< 42m (VGS=4.5V) <87m (VGS = 4.5V)Specifications Paramete Symbol Max n-channel Max p-channel Units Drain-Source Voltage VDS 30 -30 ...

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AO4604: Features: n-channel p-channelVDS (V) - 30V -30VID = 6.9A -5ARDS(ON) RDS(ON)< 28m (VGS=10V) < 52m (VGS = 10V)< 42m (VGS=4.5V) <87m (VGS = 4.5V)Specificatio...

AO4604 Data Sheet

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Part Number:
AO4604
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Description



Features:

n-channel p-channel
VDS (V) - 30V -30V
ID = 6.9A -5A
RDS(ON) RDS(ON)
< 28m (VGS=10V) < 52m (VGS = 10V)
< 42m (VGS=4.5V) <87m (VGS = 4.5V)




Specifications

Paramete Symbol Max n-channel Max p-channel Units
Drain-Source Voltage VDS 30 -30 V
Gate-Source Voltage VGS ±20 ±20 V
Continuous Drain Current A TA=25°C ID 6.9 -5 A
TA=70°C 5.8 -4.2
Pulsed Drain Current B IDM 30 -20
Power Dissipation A TA=25°C PD 2 2 W
TA=70°C 1.44 1.44
Junction and Storage Temperature Range TJ, TSTG -55 to 150 -55 to 150 °C





Description

The AO4604 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications.




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