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AO4610

Features: ·n-channel p-channel·VDS (V) = 30V -30V·ID = 8.5A(VGS=10V) -7.1A(VGS = -10V)·RDS(ON) RDS(ON)·< 18mΩ (VGS=10V) < 25mΩ (VGS = -10V)·< 28mΩ (VGS=4.5V) < 40mΩ (VGS = -4.5V)·VF<0.5V@1ASpecifications Parameter Symbol Max n-channel Max n-ch...

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SeekIC No. : 004285797 Detail

AO4610: Features: ·n-channel p-channel·VDS (V) = 30V -30V·ID = 8.5A(VGS=10V) -7.1A(VGS = -10V)·RDS(ON) RDS(ON)·< 18mΩ (VGS=10V) < 25mΩ (VGS = -10V)·< 28mΩ (VGS=4.5V) < 40m͐...

AO4610 Data Sheet

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Part Number:
AO4610
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·n-channel p-channel
·VDS (V) = 30V -30V
·ID = 8.5A(VGS=10V) -7.1A(VGS = -10V)
·RDS(ON) RDS(ON)
·< 18mΩ (VGS=10V) < 25mΩ (VGS = -10V)
·< 28mΩ (VGS=4.5V) < 40mΩ (VGS = -4.5V)
·VF<0.5V@1A


Specifications

Parameter
Symbol
Max n-channel
Max n-channel
Units
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
30
±20
-30
±20
V
V
Continuous Drain
Current A		 TA=25°C
TA=70°C
ID
8.5
6.6
-7.1
-5.6
A
Pulsed Drain CurrentB
IDM
30
-30
Power Dissipation A TA=25°C
TA=70°C

PD
2
1.28
2
1.28
W
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
-55 to 150
°C



Description

The AO4610 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. A Schottky diode is co-packaged with the n-channel FET to minimize body diode losses. Standard Product AO4610 is Pb-free (meets ROHS & Sony 259 specifications). AO4610L is a Green Product ordering option. AO4610 and AO4610L are electrically identical.




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