Features: ·n-channel p-channel·VDS (V) = 30V -30V·ID = 8.5A(VGS=10V) -7.1A(VGS = -10V)·RDS(ON) RDS(ON)·< 18mΩ (VGS=10V) < 25mΩ (VGS = -10V)·< 28mΩ (VGS=4.5V) < 40mΩ (VGS = -4.5V)·VF<0.5V@1ASpecifications Parameter Symbol Max n-channel Max n-ch...
AO4610: Features: ·n-channel p-channel·VDS (V) = 30V -30V·ID = 8.5A(VGS=10V) -7.1A(VGS = -10V)·RDS(ON) RDS(ON)·< 18mΩ (VGS=10V) < 25mΩ (VGS = -10V)·< 28mΩ (VGS=4.5V) < 40m͐...
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Parameter |
Symbol |
Max n-channel |
Max n-channel |
Units | |
Drain-Source Voltage Gate-Source Voltage |
VDS VGS |
30 ±20 |
-30 ±20 |
V V | |
Continuous Drain Current A |
TA=25°C TA=70°C |
ID |
8.5 6.6 |
-7.1 -5.6 |
A |
Pulsed Drain CurrentB |
IDM |
30 |
-30 | ||
Power Dissipation A | TA=25°C TA=70°C |
PD |
2 1.28 |
2 1.28 |
W |
Junction and Storage Temperature Range |
TJ, TSTG |
-55 to 150 |
-55 to 150 |
°C |
The AO4610 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. A Schottky diode is co-packaged with the n-channel FET to minimize body diode losses. Standard Product AO4610 is Pb-free (meets ROHS & Sony 259 specifications). AO4610L is a Green Product ordering option. AO4610 and AO4610L are electrically identical.