AO3435

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 1V @ 250µA
Power - Max: 1W
Packaging: Tape & Reel (TR)
Gate Charge (Qg) @ Vgs: 11nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C: 2.9A
Supplier Device Package: SOT-23
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.5A, 4.5V
Input Capacitance (Ciss) @ Vds: 745pF @ 10V


Features:

`V<sub>DS</sub> = -20V
`I_D = -3.5A (V_GS = -4.5V)
`R<sub>DS(ON)</sub> < 70m (V<sub>GS</sub> =- 4.5V)
`R_DS(ON) < 90m (V_GS = -2.5V)
`R<sub>DS(ON)</sub> < 110m (V<sub>GS</sub> = -1.8V)
`R_DS(ON) < 130m (V_GS = -1.5V)




Specifications

Parameter		Symbol	10 Sec	Steady State	Units
Drain-Source Voltage		VDS	-20		V
Gate-Source Voltage		VGS	±8		V
Continuous Drain Current AF	TA=25	ID	-3.5	-2.9	A
	TA=70		-2.7	-2.3
Pulsed Drain Current B		IDM	-25
Power Dissipation	TA=25	PD	1.4	1	W
	TA=70		0.9	0.6
Junction and Storage Temperature Range		TJ, TSTG	-55 to 150

Description

The AO3435/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.5V. This device is suitable for use in buck convertor applications.

AO3435 and AO3435L are electrically identical.
-RoHS Compliant
-AO3435L is Halogen Free