AO3400

The AO3400 is a kind of N-Channel enhancement mode field effect transistor.It uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5 V.It is suitable for use as a load switch or in PWM applications.It is Pb-free and is a green product ordering option.

The following is AO3400's features: (1) VDS(V) is 30 V; (2) ID is 5.8 A(VGS is 10 V); (3) RDS(ON)< 28m(VGS is 10 V); (4) RDS(ON) < 33m (VGS is 4.5 V); (5) RDS(ON) < 52m (VGS is 2.5V).

What comes next is AO3400 absolute maximum ratings at TA is 25 (unless otherwise noted).(1): the maximum drain-source voltage(VDS) is 30 V; (2): the maximum gate-source voltage(VGS) is ±12 V; (3): the maximum continuous drain current(ID) is 5.8 A when TA is 25 and 4.9 when TA is 70; (4): pulsed drain current(PD) is 30 A; (5): power dissipation is 1.4 W at the condition of TA is 25 and is 1 W at TA is 70; (6): the minimum of drain-source breakdown voltage(BVDSS) is 30 V when ID is 250 A and VGS is 0 V; (7): the maximum of gate-body leakage current(IGSS) is 100 nA at VDS is 24 V and VGS is ±12 V; (8): the typical of gate threshold voltage is 1.1 V,the minimum is 0.7 V and the maximum is 1.4 V at VDS is VGS and ID is 250A; (9): maximum body-diode continuous current(IS) is 2.5 A; (10): the typical of diode forward voltage is 0.71 V at IS is 1 A and VGS is 0 V and the maximum is 1 V.