Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)Alternate Packaging
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25° C: 6A
Power - Max: 1.4W
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 1mA
Input Capacitance (Ciss) @ Vds: 630pF @ 10V
Gate Charge (Qg) @ Vgs: 8.8nC @ 4.5V
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 24 mOhm @ 6A, 10V
Features: ·VDS (V) = 20V
·ID = 6 A (VGS = 10V)
·RDS(ON)< 24mΩ (VGS = 10V)
·RDS(ON)< 27mΩ (VGS = 4.5V)
·RDS(ON)< 42mΩ (VGS = 2.5V)
·RDS(ON) < 55mΩ (VGS = 1.8V)Specifications
|
Parameter |
Symbol |
Maximum |
Units |
Drain-Source Voltage
Gate-Source Voltage |
VDS
VGS |
20
±12 |
V
V |
Continuous Drain
Current A |
TA=25°C
TA=70°C |
ID |
6
5 |
A |
| Pulsed Drain CurrentB |
IDM |
2.5 |
| Power Dissipation A |
TA=25°C
TA=70°C |
PD |
1.4
0.9 |
W |
| Junction and Storage Temperature Range |
TJ, TSTG |
-55 to 150 |
°C |
Parameters: | Technical/Catalog Information | AO3420 |
| Vendor | Alpha & Omega Semiconductor Inc |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 6A |
| Rds On (Max) @ Id, Vgs | 24 mOhm @ 6A, 10V |
| Input Capacitance (Ciss) @ Vds | 630pF @ 10V |
| Power - Max | 1.4W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 8.8nC @ 4.5V |
| Package / Case | SOT-23-3, TO-236-3 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | AO3420
AO3420
785 1014 2 ND
78510142ND
785-1014-2
|
AO3420 Data Sheet
