AO3416

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)Alternate Packaging
Drain to Source Voltage (Vdss): 20V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) @ Vgs: 16nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C: 6.5A
Power - Max: 1.4W
Supplier Device Package: SOT-23-3
Input Capacitance (Ciss) @ Vds: 1160pF @ 10V
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.5A, 4.5V


Features:

V_DS (V) = 20V
I_D = 6.5 A
R_DS(ON) < 22m (V_GS = 4.5V)
R_DS(ON) < 26m (V_GS = 2.5V)
R_DS(ON) < 34m (V_GS = 1.8V)
ESD Rating: 2000V HB




Pinout






Specifications

Paramete		Symbol	Maximum	Units
Drain-Source Voltage		VDS	20	V
Gate-Source Voltage		VGS	±8	V
Continuous Drain Current A	TA=25°C	ID	6.5	A
	TA=70°C		5.2
Pulsed Drain Current B		IDM	30
Power Dissipation A	TA=25°C	PD	1.4	W
	TA=70°C		0.9
Junction and Storage Temperature Range		TJ, TSTG	-55 to 150	°C

Description

The AO3416 is designed as one kind of N-channel enhancement mode field effect transistor that can be used in as a load switch or in PWM applications. Also this device is a green product ordering option and electrically identical. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Features of the AO4433 are:(1)RDS(ON) < 22 m (VGS = 4.5 V);(2)RDS(ON) < 26 m (VGS = 2.5 V);(3)ID = 6.5 A;(4)VDS (V) = 20 V.

The absolute maximum ratings of the AO3416 can be summarized as:(1)Drain-Source Voltage: 20 V;(2)Gate-Source Voltage: +/- 8 V;(3)Continuous Drain Current TA=25°C: 6.5 A;(4)Continuous Drain Current TA=70°C: 5.2 A;(5)Pulsed Drain Current: 30 A;(6)Power Dissipation TA=25°C: 1.4 W;(7)Power Dissipation TA=70°C: 0.9 W;(8)Junction and Storage Temperature Range: -55 to 150 .

The electrical characteristics of AO3416 can be summarized as:(1)Drain-Source Breakdown Voltage: 20 V;(2)Zero Gate Voltage Drain Current: 1 uA;(3)Gate-Body leakage current: +/-10 uA;(4)Gate Threshold Voltage: 0.4 to 1.0 V;(5)On state drain current: 30 A;(6)Forward Transconductance: 29 S;(7)Diode Forward Voltage: 0.76 to 1.0 V;(8)Maximum Body-Diode Continuous Current: 2.5 A. If you want to know more information such as the electrical characteristics about the AO3416, please download the datasheet in www.seekic.com or www.chinaicmart.com.

The AO3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. AO3416L ( Green Product ) is offered in a lead-free package.




Parameters:

Technical/Catalog Information	AO3416
Vendor	Alpha & Omega Semiconductor Inc (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	6.5A
Rds On (Max) @ Id, Vgs	22 mOhm @ 6.5A, 4.5V
Input Capacitance (Ciss) @ Vds	1160pF @ 10V
Power - Max	1.4W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	16nC @ 4.5V
Package / Case	SOT-23-3, TO-236-3
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	AO3416 AO3416 785 1011 6 ND 78510116ND 785-1011-6