AO3414

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)Alternate Packaging
Drain to Source Voltage (Vdss): 20V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) @ Vgs: 6.2nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C: 3A
Power - Max: 1.4W
Supplier Device Package: SOT-23-3
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.2A, 4.5V
Input Capacitance (Ciss) @ Vds: 436pF @ 10V


Pinout






Description

The AO3414 is designed as a N-channel enhancement mode field effect transistor. It uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.

AO3414 has five features. (1)Vdc(V)=20V. (2)Id=4.2A (Vgs=4.5V). (3)Rds(on)<50m (Vgs=4.5V). (4)Rds(on)<63m (Vgs=2.5V). (5)Rds(on)<87m (Vgs=1.8V). Those are all the main features.

Some absolute maximum ratings of AO3414 have been concluded into several points as follow. (1)Its drain to source voltage would be 20V. (2)Its gate to source voltage would be +/-8V. (3)Its continuous drain current would be 4.2A at Ta=25°C and would be 3.2A at Ta=70°C. (4)Its pulsed drain current would be 15A. (5)Its power dissipation would be 1.4W at Ta=25°C and would be 0.9W at Ta=70°C. (6)Its junction and storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some AO3414 electrical characteristics are concluded as follow. (1)Its drain to source breakdown voltage would be min 20V. (2)Its zero gate voltage drain current would be max 1uA and would be 5uA at Tj=55°C. (3)Its gate-body leakage current would be max 100nA. (4)Its on state drain current owuld be min 15A. (5)Its gate threshold voltage would be min 0.4V and typ 0.6V and max 1V. (6)Its forward transconductance would be typ 11S. (7)Its diode forward voltage would be typ 0.76V and max 1V. (8)Its maximum body-diode continuous current would be max 2A. (9)Its input capacitance would be typ 436pF. (10)Its output capacitance would be typ 66pF. (11)Its reverse transfer capacitance would be typ 44pF. (12)Its gate resistance would be typ 3ohms. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!

Parameters:

Technical/Catalog Information	AO3414
Vendor	Alpha & Omega Semiconductor Inc (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	4.2A
Rds On (Max) @ Id, Vgs	50 mOhm @ 4.2A, 4.5V
Input Capacitance (Ciss) @ Vds	436pF @ 10V
Power - Max	1.4W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	6.2nC @ 4.5V
Package / Case	SOT-23-3, TO-236-3
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	AO3414 AO3414 785 1009 6 ND 78510096ND 785-1009-6