AO3409

MOSFET P-CH -30V -2.6A SOT23

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AO3409 Picture
SeekIC No. : 003430869 Detail

AO3409: MOSFET P-CH -30V -2.6A SOT23

floor Price/Ceiling Price

US $ .07~.34 / Piece | Get Latest Price
Part Number:
AO3409
Mfg:
Supply Ability:
5000

Price Break

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  • 25~100
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  • 500~1000
  • Unit Price
  • $.34
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  • $.09
  • $.07
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/22

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Product Details

Quick Details

Series: - Manufacturer: Alpha & Omega Semiconductor Inc
FET Type: MOSFET P-Channel, Metal Oxide Gain : 15.5 dB
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 2.6A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 130 mOhm @ 2.6A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) @ Vgs: 9nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 370pF @ 15V
Power - Max: 1.4W Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3    

Description

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Current - Continuous Drain (Id) @ 25° C: 2.6A
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)Alternate Packaging
Gate Charge (Qg) @ Vgs: 9nC @ 10V
FET Type: MOSFET P-Channel, Metal Oxide
Power - Max: 1.4W
Supplier Device Package: SOT-23-3
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 130 mOhm @ 2.6A, 10V
Input Capacitance (Ciss) @ Vds: 370pF @ 15V


Features:

VDS (V) = -30V
ID = -2.6 A (VGS = -10V)
R DS(ON) < 130m (VGS = -10V)
R DS(ON) < 200m (VGS = -4.5V)





Pinout

  Connection Diagram




Specifications

Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain
Current A
TA=25°C
ID
-2.6
A
TA=70°C
-2.2
Pulsed Drain Current B
IDM
-20
Power Dissipation A TA=25°C
PD
-1.4
W
TA=70°C
1
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
°C





Description

The AO3409 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3409 is Pb-free (meets ROHS & Sony 259 specifications). AO3409L is a Green Product ordering option. AO3409 and AO3409L are electrically identical.






Parameters:

Technical/Catalog InformationAO3409
VendorAlpha & Omega Semiconductor Inc (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C2.6A
Rds On (Max) @ Id, Vgs130 mOhm @ 2.6A, 10V
Input Capacitance (Ciss) @ Vds 370pF @ 15V
Power - Max1.4W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs9nC @ 10V
Package / CaseSOT-23-3, TO-236-3
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names AO3409
AO3409
785 1007 6 ND
78510076ND
785-1007-6



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