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ANSR2N7476T1

Features: ··Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Eyelets· Electrically Isolated· Light WeightSpecifications Parameter Symbol Rating Unit Continuous Drain Curre...

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SeekIC No. : 004285732 Detail

ANSR2N7476T1: Features: ··Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Eyelets· Electrically...

ANSR2N7476T1 Data Sheet

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Part Number:
ANSR2N7476T1
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

··Low RDS(on)
· Fast Switching
· Single Event Effect (SEE) Hardened
· Low Total Gate Charge
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Eyelets
· Electrically Isolated
· Light Weight


Specifications

Parameter Symbol Rating Unit
Continuous Drain Current, VGS @ 12V,Tc = 25 ID 45 A
Continuous Drain Current, VGS @ 12V,Tc = 100 ID 29 A
Pulsed Drain Current*1 IDM 180 A
Power Dissipation Tc = 25 PD 208 W
Linear Derating Factor   1.67 /W
Gate-to-Source Voltage VGS ±20 V
Single Pulse Avalanche Energy*4 EAS 256 mJ
Avalanche Current IAR 45 A
Repetitive Avalanche Energy EAR 20.8 mJ
Peak Diode Recovery dv/dt *2 dv/dt 19.8 V/ns
Operating Junction and Storage Temperature Range TJ,TSTG -55 to + 175
Lead Temperature 300 (0.063 in.(1.6 mm from case for 10s))
Weight 9.3 ( Typical) g



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