Features: • 5A, 200V, rDS(ON) = 0.500Ω• Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)• Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM• Photo Current - 3nA Per-RAD(Si)/s Typically•...
ANSR2N7275: Features: • 5A, 200V, rDS(ON) = 0.500Ω• Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)• Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typical...
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Features: ··Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge...
JANSR2N7275 | UNITS | ||
Drain to Source Voltage |
VDS |
200 |
V |
Drain to Gate Voltage (RGS = 20kΩ) |
VDGR |
200 |
V |
Continuous Drain Current | |||
TC = 25 TC = 100 |
ID ID |
5 3 |
A A |
Pulsed Drain Current |
IDM |
15 |
A |
Gate to Source Voltage |
VGS |
±20 |
V |
Maximum Power Dissipation | |||
TC = 25 TC = 100 |
PT PT |
25 10 |
W W |
Linear Derating Factor |
0.20 |
W/oC | |
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) |
IAS |
15 |
A |
Continuous Source Current (Body Diode) |
IS |
5 |
A |
Pulsed Source Current (Body Diode) |
ISM |
15 |
A |
Operating and Storage Temperature |
TJ, TSTG |
-55 to 150 |
|
Lead Temperature (During Soldering) |
TL |
300 |
|
(Distance >0.063in (1.6mm) from Case, 10s Max) Weight (Typical) |
1.0 |
g |