AM83135-030

Specifications

Symbol	Parameter	Value	Unit
PDISS	Power Dissipation* (TC 50°C)	133	W
IC	Device Current*	6.0	A
VCC	Collector-Supply Voltage*	46	V
TJ	Junction Temperature (Pulsed RF Operation)	250	°C
TSTG	Storage Temperature	- 65 to +200	°C

Description

The AM83135-030 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.

AM83135-030 is characterized at 100msec pulse width and 10% duty cycle, but is capable of operation over a range of pulse widths, duty cycles, and temperatures, and withstand a 3:1 output VSWR with a + 1 dB input overdrive. Low RF
thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics).

The AM83135-030 is supplied in the IMPAC™ Hermetic Metal/Ceramic package with internal Input/Output impedance matching circuitry, and is intended for military and other high reliability applications.