AM83135-005

Specifications

Symbol	Parameter	Value	Unit
PDISS	Power Dissipation* (TC 100°C)	40	W
IC	Device Current*	1.8	A
VCC	Collector-Supply Voltage*	34	V
TJ	Junction Temperature (Pulsed RF Operation)	250	°C
TSTG	Storage Temperature	- 65 to +200	°C

Description

The AM83135-005 device is a medium power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed driver applications.

This device is capable of operation over a wide range of pulse widths. duty cycles and temperatures, and can withstand a 5:1 output VSWR. Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure high reliability and product consistency.

The AM83135-005 is supplied in the AMPAC^TM Hermetic Metal/Ceramic package with internal Input/ Output matching circuitry, and is intended for military and other high reliability applications.