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AM82731-050

Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 50°C) 167 W IC Device Current* 8 A VCC Collector-Supply Voltage* 46 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature - 65 to +200 °CDescriptionThe AM82731-05...

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AM82731-050: Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 50°C) 167 W IC Device Current* 8 A VCC Collector-Supply Voltage* 46 V TJ Junction Temperature (P...

AM82731-050 Data Sheet

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Part Number:
AM82731-050
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/12

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Product Details

Description



Specifications

Symbol Parameter Value Unit
PDISS Power Dissipation* (TC  50°C) 167 W
IC Device Current* 8 A
VCC Collector-Supply Voltage* 46 V
TJ Junction Temperature (Pulsed RF Operation) 250 °C
TSTG Storage Temperature - 65 to +200 °C



Description

The AM82731-050 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.

The device is capable of operation over a wde range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR with a +1 dB input overdrive. Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure high reliability and product consistency.

The AM82731-050 is supplied in the AMPACTM Hermetic Metal/Ceramic package with internal Input/Output impedance matching circuitry, and is intended for military and other high reliability applications. 




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