AM82731-006

Specifications

Symbol	Parameter	Value	Unit
PDISS	Power Dissipation* (TC 100°C)	40	W
IC	Device Current*	1.8	A
VCC	Collector-Supply Voltage*	34	V
TJ	Junction Temperature (Pulsed RF Operation)	250	°C
TSTG	Storage Temperature	- 65 to +200	°C

Description

The AM82731-006 device is amedium power silicon bipolar NPN transistor specifically designed for SBand radar pulsed driver applications.

AM82731-006 is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and can withstand a 5:1 output VSWR. Low RF thermal resistance, refractory/gold metallization, and automatic wire bonding techniques ensure high reliability and product consistency.

The AM82731-006 is supplied in the hermetic metal/ ceramic package with internal input/output impedance matching circuitry, and is intended for military and other high reliability applications.