AM82731-012

Specifications

Symbol	Parameter	Value	Unit
PDISS	Power Dissipation* (TC50°C)	50	W
IC	Device Current*	2.0	A
VCC	Collector-Supply Voltage*	46	V
TJ	Junction Temperature (Pulsed RF Operation)	250	°C
TSTG	Storage Temperature	- 65 to +200	°C

Description

The AM82731-012 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.

AM82731-012 is capable of operaion over a wide range of pulse widths, duty cycles, and temperatures and can withstand a 3:1 output VSWR with a + 1 dB input overdrive. Low RF thermal resistance, refractory/gold metallization, and automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics).

The AM82731-012 is supplied in the Hermetic Metal/ Ceramic package with internal Input/Output impedance matching sircuitry, and is intended for military and other high reliability applications.