AM82731-025

Specifications

Symbol	Parameter	Value	Unit
PDISS	Power Dissipation* (TC50°C)	100	W
IC	Device Current*	4	A
VCC	Collector-Supply Voltage*	46	V
TJ	Junction Temperature (Pulsed RF Operation)	250	°C
TSTG	Storage Temperature	- 65 to +200	°C

Description

The AM82731-025 device is a high power silicon bipolarNPNtransistor specifically designed forS-Band radar pulsed output and driver applications.

AM82731-025 is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and can withstand a 3:1 output VSWR with a +1dB input over drive. Low RF thermal resistance, refractory/ gold metallization, and automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics).

The AM82731-025 is supplied in the Hermetic Metal/ Ceramic package with internal Input/Output impedance matching circuitry, and is intended for military and other high reliability applications.