AM2729-110 Selling Leads, Price trend, AM2729-110 DataSheet download, circuit diagram from SeekIC.com

Features: . REFRACTORY/G . OLD METALLIZATION . EMITTER SITE BALLASTED . 3:1 VSWR CAPABILITY·LOW THERMAL RESISTANCE . INPUT/OUTPUT MATCHING . OVERLAY GEOMETRY . METAL/CERAMIC HERMETIC · PACKAGE POUT = 105 W MIN. WITH 6.5 dB GAINPinoutSpecifications Symbol Parameter Value Unit PDISS...

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SeekIC No. : 004282105 Detail

AM2729-110: Features: . REFRACTORY/G . OLD METALLIZATION . EMITTER SITE BALLASTED . 3:1 VSWR CAPABILITY·LOW THERMAL RESISTANCE . INPUT/OUTPUT MATCHING . OVERLAY GEOMETRY . METAL/CERAMIC HERMETIC · PACKAGE POUT ...

AM2729-110 Data Sheet

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Part Number:: AM2729-110
Supply Ability:: 5000

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1~5000

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Negotiable

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15 Days

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Upload time: 2024/12/25

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Product Details

Description

Features:

. REFRACTORY/G . OLD METALLIZATION
. EMITTER SITE BALLASTED
. 3:1 VSWR CAPABILITY
· LOW THERMAL RESISTANCE
. INPUT/OUTPUT MATCHING
. OVERLAY GEOMETRY
. METAL/CERAMIC HERMETIC
· PACKAGE P_OUT = 105 W MIN. WITH 6.5 dB GAIN

Pinout

Connection Diagram

Specifications

Symbol	Parameter	Value	Unit
P_DISS	Power Dissipation* (T_C100°C)	438	W
I_C	Device Current*	12	A
V_CC	Collector-Supply Voltage*	48	V
T_J	Junction Temperature (Pulsed RF Operation)	250
T_STG	Storage Temperature	- 65 to +200

Description

The AM2729-110 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.

This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR. Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics).

The AM2729-110 is supplied in the BIGPAC™ Hermetic Metal/Ceramic package with internal Input/Output matching circuitry, and is intended for military and other high reliability applications.

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AM2729-110

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