Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 100°C) 300 W IC Device Current* 16.5 A VCC Collector-Supply Voltage* 35 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature - 65 to +200 °CDescriptionThe AM091...
AM0912-150: Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 100°C) 300 W IC Device Current* 16.5 A VCC Collector-Supply Voltage* 35 V TJ Junction Temperatu...
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Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 100°C) 220 ...
Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC100°C) 940 W...
DescriptionThe AM09F800BT-70EC is designed as one kind of triple phase leg MOSFET power module tha...
Symbol | Parameter | Value | Unit |
PDISS | Power Dissipation* (TC 100°C) | 300 | W |
IC | Device Current* | 16.5 | A |
VCC | Collector-Supply Voltage* | 35 | V |
TJ | Junction Temperature (Pulsed RF Operation) | 250 | °C |
TSTG | Storage Temperature | - 65 to +200 | °C |