AM0912-080

Specifications

Symbol	Parameter	Value	Unit
PDISS	Power Dissipation* (TC 100°C)	220	W
IC	Device Current*	7.0	A
VCC	Collector-Supply Voltage*	50	V
TJ	Junction Temperature (Pulsed RF Operation)	250	°C
TSTG	Storage Temperature	- 65 to +200	°C

Description

The AM0912-080 Avionics power transistor is a broadband, high peak pulse power device specifically designed for avionics applications requiring broad bandwidth with moderate duty cycle and pulse width constraints such as ground/ship based DME/TACAN.

This AM0912-080 is also designed for specialized applications including JTIDS where reduced power provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles.

The AM0912-080 is housed in the unique AMPAC™ Hermetic Metal/Ceramic package with internal Input/Output matching structures.